Electronic Devices and Circuits 2

Electrical Devices and Circuits

Created on By wefru

Electronic Devices and Circuits 2


1 / 10

Which of the following expressions represents the correct distribution of the electrons in the conduction band? (gc(E)=density of quantum states, fF(E)=Fermi dirac probability

2 / 10

. What is the value of the effective density of states function in the conduction band at 300k?

3 / 10

in a semiconductor which of the following carries can contribute to the current?

4 / 10

Q14)    The value of transconductance decreases in simplified low frequency equivalent circuit of n-channel MOSFET due to increase in the value of _______

5 / 10

Q15)   What is the effect of MOSFET biasing in the saturation region especially while representing the internal resistances and capacitances in n-channel E-MOSFET configuration?

6 / 10

Q16)   Which among the following are specifically the advantages of bipolar design technology?

7 / 10

Q17)   Which condition is applicable for a body to be more positive than source in a small signal equivalent circuit of N-type MOSFET inclusive of body effect?

8 / 10

Q18)   Which among the below mentioned devices acts as a driver in CMOS Inverter Circuit?

9 / 10

Q19)    Biasing of D-MOSFET in saturation or non-saturation region while using with depletion load device, specifically depends on ______

10 / 10

Q20)   What is the value of gate-to-source voltage (VGS) for the circuit diagram shown below?

Your score is

The average score is 0%


Leave a Reply

Your email address will not be published.