Electronic Devices and Circuits 2 December 2, 2020December 24, 2020wefru Electrical Devices and Circuits 0 Created on December 02, 2020 By wefru Electronic Devices and Circuits 2 TEST YOUR KNOWLEDGE OF SCIENCE 1 / 10 Which of the following expressions represents the correct distribution of the electrons in the conduction band? (gc(E)=density of quantum states, fF(E)=Fermi dirac probability n(E)=gc(E)*fF(E) n(E)=gc(-E)*fF(E) n(E)=gc(E)*fF(-E) n(E)= gc(-E)*fF(-E) 2 / 10 . What is the value of the effective density of states function in the conduction band at 300k? 3*1019 cm-3 0.4*10-19 cm-3 2.5*1019 cm-3 2.5*10-19 cm-3 3 / 10 in a semiconductor which of the following carries can contribute to the current? Electrons Holes Both none 4 / 10 Q14) The value of transconductance decreases in simplified low frequency equivalent circuit of n-channel MOSFET due to increase in the value of _______ Source resistance Load resistance Both a and b None of the above 5 / 10 Q15) What is the effect of MOSFET biasing in the saturation region especially while representing the internal resistances and capacitances in n-channel E-MOSFET configuration? Channel gets pinched off at the drain by increasing the value of Cgd Channel gets pinched off at the source by increasing the value of Cgd Channel gets pinched off at the drain by decreasing the value of Cgd upto zero Channel gets pinched off at the source by decreasing the value of Cgd 6 / 10 Q16) Which among the following are specifically the advantages of bipolar design technology? High input resistance at low frequencies High input resistance at low frequencies High voltage gain High value of transconductance 7 / 10 Q17) Which condition is applicable for a body to be more positive than source in a small signal equivalent circuit of N-type MOSFET inclusive of body effect? Vbs > 0 Vbs < 0 Vbs = 0 None of the above 8 / 10 Q18) Which among the below mentioned devices acts as a driver in CMOS Inverter Circuit? PMOS NMOS Both a and b None of the above 9 / 10 Q19) Biasing of D-MOSFET in saturation or non-saturation region while using with depletion load device, specifically depends on ______ VDD & Rs VDD & VDS VDD & ID ID & Rs 10 / 10 Q20) What is the value of gate-to-source voltage (VGS) for the circuit diagram shown below? 1.5 V 2.9 V 3.5 V 4.9 V Your score isThe average score is 0% LinkedIn Facebook Twitter VKontakte 0% Restart quiz