Electronic Devices and Circuits -9

Physics Electronic Devices and Circuits-9 Multiple Choice Question Answers for all competitive exams Preparation for NEEET / JEE and KEA Preparation.

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Electronic Devices and Circuits 9

TEST YOUR KNOWLEDGE OF SCIENCE

1 / 10

Q81)   Which type of breakdown can be prevented by adopting a reverse-biased  gate protecting diode on input side of MOSFET?

2 / 10

Q82)  Subthreshold current is basically a drain current that flows only when __________

3 / 10

Q83)   Which is/are the major drawback/s of including an additional  n__drift layer in a typical n-p-n bipolar power transistor?

4 / 10

Q84)   Which is/are the major drawback/s of including an additional  n__drift layer in a typical n-p-n bipolar power transistor?

5 / 10

Q85)  The n_region in a vertical cross-section of a typical n-p-n bipolar power transistor is also known as _________

6 / 10

Q86)  What is/ are the necessity /ies of using a vertical structure in Power BJTs?

7 / 10

Q87)  Which among the following does not belong to the category of LC oscillators?

8 / 10

Q88)  Multivibrators belong to the category of _____________

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Q89)   Why is the practical value of | Aβ | considered or adjusted to be slightly greater than '1'?

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Q90)   Which among the following parameters acts as an initiator for the operation of an oscillator in the absence of input signal?

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