Electronic Devices and Circuits -9 December 2, 2020December 24, 2020wefru Physics Electronic Devices and Circuits-9 Multiple Choice Question Answers for all competitive exams Preparation for NEEET / JEE and KEA Preparation. 0 Created on December 02, 2020 By wefru Electronic Devices and Circuits 9 TEST YOUR KNOWLEDGE OF SCIENCE 1 / 10 Q81) Which type of breakdown can be prevented by adopting a reverse-biased gate protecting diode on input side of MOSFET? Avalanche breakdown Punch through breakdown Snapback breakdown Static Charge Breakdown 2 / 10 Q82) Subthreshold current is basically a drain current that flows only when __________ VGS is slightly greater than VT VGS is slightly less than VT VGS is exactly equal to VT None of the above 3 / 10 Q83) Which is/are the major drawback/s of including an additional n__drift layer in a typical n-p-n bipolar power transistor? Increase in on-state device resistance by increasing on-state power loss Increase in on-state device resistance by decreasing on-state power loss Increase in on-state device resistance by decreasing on-state power loss All of the above 4 / 10 Q84) Which is/are the major drawback/s of including an additional n__drift layer in a typical n-p-n bipolar power transistor? Increase in on-state device resistance by increasing on-state power loss Increase in on-state device resistance by decreasing on-state power loss Increase in on-state device resistance by completely stabilizing the level of on-state power loss All of the above 5 / 10 Q85) The n_region in a vertical cross-section of a typical n-p-n bipolar power transistor is also known as _________ Emitter drift region Base drift region Collector drift region None of the above 6 / 10 Q86) What is/ are the necessity /ies of using a vertical structure in Power BJTs? Increase in cross-sectional area to allow the flow of device current Reduction in on-state power dissipation of transistor Reduction in thermal resistance to keep the problem of power dissipation under control All of the above 7 / 10 Q87) Which among the following does not belong to the category of LC oscillators? Hartley oscillator Colpitt's oscillator Clapp oscillator Wein bridge oscillator 8 / 10 Q88) Multivibrators belong to the category of _____________ Square wave oscillators Triangular wave oscillators Ramp wave oscillators Sinusoidal oscillators 9 / 10 Q89) Why is the practical value of | Aβ | considered or adjusted to be slightly greater than '1'? To compensate for noise voltage To compensate for phase shifting of two relevant signals upto 180° To compensate for non-linearities existing in the circuit To compensate for the change in feedback voltage 10 / 10 Q90) Which among the following parameters acts as an initiator for the operation of an oscillator in the absence of input signal? Noise voltage Noise power Noise temperature Noise figure Your score isThe average score is 0% LinkedIn Facebook Twitter VKontakte 0% Restart quiz