Basic Electronics-3

Physics Basic Electricity-3 Multiple Choice Question Answers for all competitive exams Preparation for NEET / JEE Advance , JEE and KSET Preparation.

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Basic Electronics 3


1 / 10

JFET biasing at DC level can be undertaken by _____________

2 / 10

Determine the value of transconductance for N-channel JFET with IDSS = 9 mA, Vp = -2V, VGS = -1 V.

3 / 10

 Which kind of small signal JFET parameter is also a well-known form of 'Dynamic Drain Resistance' across the drain and source terminals especially when the operation of JFET is faciliated in pinch-off region?

4 / 10

Match the following FET behavior with respective Drain Characteristic Regions:  1. Resistor -------------------------------------------- A) Breakdown Region
2. Constant-Current Source ------------------ B) Ohmic Region
3. Constant-Voltage Source ------------------ C) Pinch-off Region

5 / 10

 Which region of drain characteristic displays linearity with the direct variation in current corresponding to voltage especially for lesser values of drain-to-source voltage (VDS) by enabling the JFET to act as an ordinary resistor?

6 / 10

 Which type of static characteristics exhibit the relationship between drain current and gate-to-source voltage for several values of drain-to-source voltage?

7 / 10

JFET is considered as a voltage controlled device because ______

8 / 10

Which current is generated due to shorting of gate terminal to source with zero value of gate-to-source voltage?

9 / 10

 On the application of VDD to JFET, the biasing strategy of gate to channel at any point over the channel yields output equal to _______.

10 / 10

 Which is the most significant current generating parameter in common drain JFET amplifier?

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